Thermoelectric properties of Indium and Gallium dually-doped ZnO thin films
In
this paper, we investigated the effect of single and multi-dopants on
thermoelectrical properties of host ZnO films.
Incorporation
of the single dopant Ga in the ZnO films improved the conductivity and mobility
but lowered the Seebeck coefficient.
Dual
Ga- and In-doped ZnO thin films show slightly decreased electrical conductivity
but improved Seebeck coefficient.
The
variation of thermoelectric properties is discussedin terms of film
crystallinity, which is subjected to the dopants’ radius.
Small
amounts of In dopants with a large radius may introduce localized regions in
the host film, affecting the thermoelectric properties.
Consequently,
a 1.5 times increase in power factor, three times reduction in thermal
conductivity, and five-fold enhancement in the figure of merit ZT have been
achieved at 110°C.
The
results also indicate that the balanced control of both electron and lattice
thermal conductivities through dopant selection are necessary to attain low
total thermal conductivity.
Title:
| Thermoelectric properties of Indium and Gallium dually-doped ZnO thin films | |
| Authors: | Tran, Nhat Hong Nguyen Nguyen, Huu Truong Pham, Anh Thanh Tuan |
| Keywords: | crystalline IGZO thin film dual doping Seebeck coefficient thermal conductivity |
| Issue Date: | 2016 |
| Publisher: | H. : ĐHQGHN |
| Citation: | ISIKNOWLEDGE |
| Abstract: | In this paper, we investigated the effect of single and multi-dopants on thermoelectrical properties of host ZnO films. Incorporation of the single dopant Ga in the ZnO films improved the conductivity and mobility but lowered the Seebeck coefficient. Dual Ga- and In-doped ZnO thin films show slightly decreased electrical conductivity but improved Seebeck coefficient. The variation of thermoelectric properties is discussedin terms of film crystallinity, which is subjected to the dopants’ radius. Small amounts of In dopants with a large radius may introduce localized regions in the host film, affecting the thermoelectric properties. Consequently, a 1.5 times increase in power factor, three times reduction in thermal conductivity, and five-fold enhancement in the figure of merit ZT have been achieved at 110°C. The results also indicate that the balanced control of both electron and lattice thermal conductivities through dopant selection are necessary to attain low total thermalconductivity. |
| Description: | TNS06288 ; ACS APPLIED MATERIALS & INTERFACES Volume: 8 Issue: 49 Pages: 33916-33923 |
| URI: | http://repository.vnu.edu.vn/handle/VNU_123/25773 |
| Appears in Collections: | Bài báo của ĐHQGHN trong Web of Science |
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